SSM5H08TU,LF Details_SSM5H08TU,LF Related parameters PDF_Toshiba Semiconductor and Storage-Winwic

MOSFETs - Single

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Specifications

Description	Details
Series	U-MOSIII
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4V
Rds On (Max) @ Id, Vgs	160mOhm @ 750mA, 4V
Vgs(th) (Max) @ Id	1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	125 pF @ 10 V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	UFV
Package / Case	6-SMD (5 Leads), Flat Lead

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