NTE222 Details_NTE222 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bag
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	50mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	3.3 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	360mW (Ta), 1.2mW (Tc)
Operating Temperature	-65°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-72
Package / Case	TO-206AF, TO-72-4 Metal Can

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