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MOSFETs - Single
BSP316PE6327 Picture

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BSP316PE6327

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In Stock:20,292(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
SIPMOS®
Package
Tape & Reel (TR)Cut Tape (CT)
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
680mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.8Ohm @ 680mA, 10V
Vgs(th) (Max) @ Id
2V @ 170µA
Gate Charge (Qg) (Max) @ Vgs
6.4 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
146 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT223-4
Package / Case
TO-261-4, TO-261AA
Other
Price advantage, BSP316PE6327 is available in stock and can be delivered on the same day
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