JANSR2N7389 Details_JANSR2N7389 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	Military, MIL-PRF-19500/630
Package	Tray
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	12V
Rds On (Max) @ Id, Vgs	350mOhm @ 6.5A, 12V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 12 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	25W (Tc)
Operating Temperature	-55°C ~ 150°C
Mounting Type	Through Hole
Supplier Device Package	TO-205AF (TO-39)
Package / Case	TO-205AF Metal Can

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