LSIC1MO120E0080 Details_LSIC1MO120E0080 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id	4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	95 nC @ 20 V
Vgs (Max)	+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds	1825 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	179W (Tc)
Operating Temperature	-55°C ~ 150°C
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3

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