R6020JNZ4C13 Details_R6020JNZ4C13 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	234mOhm @ 10A, 15V
Vgs(th) (Max) @ Id	7V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 15 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	252W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247G
Package / Case	TO-247-3

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