IPD50R650CEBTMA1 Details_IPD50R650CEBTMA1 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	CoolMOS™ CE
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	650mOhm @ 1.8A, 13V
Vgs(th) (Max) @ Id	3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	342 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	-
Supplier Device Package	-
Package / Case	-

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