R6030JNZC8 Details_R6030JNZC8 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	143mOhm @ 15A, 15V
Vgs(th) (Max) @ Id	7V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs	74 nC @ 15 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2500 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	93W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3PF
Package / Case	TO-3P-3 Full Pack

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