AOW29S50 Details_AOW29S50 Related parameters PDF_Alpha & Omega Semiconductor Inc.-Winwic

MOSFETs - Single

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Specifications

Description	Details
Series	aMOS™
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	150mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id	3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	26.6 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1312 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	357W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-262
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

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