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MOSFETs - Single
IXRFSM12N100 Picture

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IXRFSM12N100

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In Stock:17,240(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
SMPD
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
1.05Ohm @ 6A, 15V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
77 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2875 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
940W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
16-SMPD
Package / Case
16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad
Other
Price advantage, IXRFSM12N100 is available in stock and can be delivered on the same day
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