NDPL180N10BG Details_NDPL180N10BG Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	180A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V, 15V
Rds On (Max) @ Id, Vgs	3mOhm @ 15V, 50A
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	95 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6.95 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 200W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3

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