NTK3142PT1G Details_NTK3142PT1G Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	215mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	4Ohm @ 260mA, 4.5V
Vgs(th) (Max) @ Id	1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	15.3 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	280mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-723
Package / Case	SOT-723

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