C2M0080120D Details_C2M0080120D Related parameters PDF

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：17,808(Ref. price)

Qty.	Unit Price	Ext. Price
1	$14.83900	$14.83900

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	C2M™
Package	Bulk
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	98mOhm @ 20A, 20V
Vgs(th) (Max) @ Id	4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs	62 nC @ 5 V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	950 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	192W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3

Other

Price advantage, C2M0080120D is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
AUIRF1405ZS	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 55V 150A D2PAK	$1.25760	In Stock:4126
IXFQ24N50Q	IXYS	MOSFETs - Single	Datasheet	MOSFET N-CH 500V 24A TO3P	No price	In Stock:19222
FQD13N06LTF	ON Semiconductor	MOSFETs - Single	Datasheet	MOSFET N-CH 60V 11A DPAK	No price	In Stock:19224
TK25E06K3,S1X(S	Toshiba Semiconductor and Storage	MOSFETs - Single	Datasheet	MOSFET N-CH 60V 25A TO220-3	$0.99192	In Stock:19226
IPB60R600C6ATMA1	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 600V 7.3A D2PAK	$0.55860	In Stock:9350