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MOSFETs - Single
IPA80R1K4P7XKSA1 Picture

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IPA80R1K4P7XKSA1

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In Stock:17,912(Ref. price)
Qty.Unit PriceExt. Price
1
$1.31520
$1.31520
Documents
Specifications
DescriptionDetails
Series
CoolMOS™
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id
3.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 500 V
FET Feature
Super Junction
Power Dissipation (Max)
24W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3F
Package / Case
TO-220-3 Full Pack
Other
Price advantage, IPA80R1K4P7XKSA1 is available in stock and can be delivered on the same day
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