SSM3J36FS,LF Details_SSM3J36FS,LF Related parameters PDF_Toshiba Semiconductor and Storage-Winwic

MOSFETs - Single

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Specifications

Description	Details
Series	U-MOSIII
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	330mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	1.31Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	1.2 nC @ 4 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	43 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	150mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SSM
Package / Case	SC-75, SOT-416

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