RE1E002SPTCL Details_RE1E002SPTCL Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	1.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	30 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	150mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	EMT3F (SOT-416FL)
Package / Case	SC-89, SOT-490

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