SCT3030ALHRC11 Details_SCT3030ALHRC11 Related parameters PDF

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：4,352(Ref. price)

Qty.	Unit Price	Ext. Price
1	$45.61900	$45.61900

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	Automotive, AEC-Q101
Package	Tube
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	39mOhm @ 27A, 18V
Vgs(th) (Max) @ Id	5.6V @ 13.3mA
Gate Charge (Qg) (Max) @ Vgs	104 nC @ 18 V
Vgs (Max)	+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds	1526 pF @ 500 V
FET Feature	-
Power Dissipation (Max)	262W
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247N
Package / Case	TO-247-3

Other

Price advantage, SCT3030ALHRC11 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
NP82N055KHE-E1-AZ	Renesas Electronics America Inc	MOSFETs - Single	Datasheet	N-CHANNEL POWER MOSFET	$1.96020	In Stock:3644
FDMC2512SDC	ON Semiconductor	MOSFETs - Single	Datasheet	MOSFET N-CH 25V 32A 8PQFN	$2.55360	In Stock:3340
IXTR68P20T	IXYS	MOSFETs - Single	Datasheet	MOSFET P-CH 200V 44A ISOPLUS247	No price	In Stock:19728
2SJ681(Q)	Toshiba Semiconductor and Storage	MOSFETs - Single	Datasheet	MOSFET P-CH 60V 5A PW-MOLD2	No price	In Stock:19730
APT10M07JVR	Microsemi Corporation	MOSFETs - Single	Datasheet	MOSFET N-CH 100V 225A ISOTOP	No price	In Stock:19732