IRF7726 Details_IRF7726 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	HEXFET®
Package	Tube
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	26mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	69 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2204 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.79W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Micro8™
Package / Case	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

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