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Transistors - IGBTs - Modules
VS-GB100TH120N Picture

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VS-GB100TH120N

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In Stock:17,718(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Bulk
IGBT Type
-
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
200 A
Power - Max
833 W
Vce(on) (Max) @ Vge, Ic
2.35V @ 15V, 100A
Current - Collector Cutoff (Max)
5 mA
Input Capacitance (Cies) @ Vce
8.58 nF @ 25 V
Input
Standard
NTC Thermistor
No
Operating Temperature
150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Double INT-A-PAK (3 + 4)
Supplier Device Package
Double INT-A-PAK
Other
Price advantage, VS-GB100TH120N is available in stock and can be delivered on the same day
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