FAM65HR51DS2 Details_FAM65HR51DS2 Related parameters PDF

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Configuration	Half Bridge Inverter
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	33 A
Power - Max	135 W
Vce(on) (Max) @ Vge, Ic	-
Current - Collector Cutoff (Max)	-
Input Capacitance (Cies) @ Vce	4.86 nF @ 400 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	-
Supplier Device Package	-

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