FZ1200R17HE4HOSA2 Details_FZ1200R17HE4HOSA2 Related parameters PDF

Transistors - IGBTs - Modules

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：19,654(Ref. price)

Qty.	Unit Price	Ext. Price
1	$786.82559	$786.82559

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tray
IGBT Type	-
Configuration	Single Switch
Voltage - Collector Emitter Breakdown (Max)	1700 V
Current - Collector (Ic) (Max)	1200 A
Power - Max	7800 W
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 1200A
Current - Collector Cutoff (Max)	5 mA
Input Capacitance (Cies) @ Vce	97 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 150°C
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

Other

Price advantage, FZ1200R17HE4HOSA2 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
FF300R12KT3PEHOSA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE 1200V 300A	$174.20279	In Stock:18406
VS-GT100TP60N	Vishay General Semiconductor - Diodes Division	Transistors - IGBTs - Modules	Datasheet	IGBT MOD 600V 160A INT-A-PAK	$178.15361	In Stock:18408
FS35R12YT3BOMA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE	$34.34880	In Stock:1770
FF6MR12W2M1PB11BPSA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE LOW POWER EASY	$324.13590	In Stock:1554
FP10R12YT3BOMA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	MOD IGBT LOW PWR EASY2-1	$52.03440	In Stock:18414