MG800J2YS50A Details_MG800J2YS50A Related parameters PDF

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	IGBTMOD™
Package	Bulk
IGBT Type	-
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	800 A
Power - Max	2900 W
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 800A
Current - Collector Cutoff (Max)	1 mA
Input Capacitance (Cies) @ Vce	93 nF @ 10 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-20°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

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