MG12300D-BA1MM Details_MG12300D-BA1MM Related parameters PDF

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	-
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	450 A
Power - Max	1800 W
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 300A (Typ)
Current - Collector Cutoff (Max)	2 mA
Input Capacitance (Cies) @ Vce	21.2 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	D3

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