VS-GT100TP60N Details_VS-GT100TP60N Related parameters PDF_Vishay General Semiconductor

Transistors - IGBTs - Modules

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：18,408(Ref. price)

Qty.	Unit Price	Ext. Price
1	$178.15361	$178.15361

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	Trench
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	160 A
Power - Max	417 W
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 100A
Current - Collector Cutoff (Max)	5 mA
Input Capacitance (Cies) @ Vce	7.71 nF @ 30 V
Input	Standard
NTC Thermistor	No
Operating Temperature	175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	INT-A-PAK (3 + 4)
Supplier Device Package	INT-A-PAK

Other

Price advantage, VS-GT100TP60N is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
FF300R07ME4B11BOSA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MOD 650V 390A 1100W	$128.46820	In Stock:2761
APTGT25H120T1G	Microsemi Corporation	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE 1200V 40A 156W SP1	No price	In Stock:19640
CM150DY-24A	Powerex Inc.	Transistors - IGBTs - Modules	Datasheet	IGBT MOD 1200V 150A 960W	No price	In Stock:19644
MID200-12A4	IXYS	Transistors - IGBTs - Modules	Datasheet	IGBT MOD 1200V 270A 1130W Y3DCB	$93.77775	In Stock:19646
FZ1800R12HE4B9HOSA2	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE 1200V 2735A	$1111.98715	In Stock:19648