IXYX200N65B3 Details_IXYX200N65B3 Related parameters PDF

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	XPT™, GenX3™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	410 A
Current - Collector Pulsed (Icm)	1100 A
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 100A
Power - Max	1560 W
Switching Energy	5mJ (on), 4mJ (off)
Input Type	Standard
Gate Charge	340 nC
Td (on/off) @ 25°C	60ns/370ns
Test Condition	400V, 100A, 0Ohm, 15V
Reverse Recovery Time (trr)	108 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	PLUS247™-3

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