IXYP15N65C3D1 Details_IXYP15N65C3D1 Related parameters PDF

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	GenX3™, XPT™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	38 A
Current - Collector Pulsed (Icm)	80 A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 15A
Power - Max	200 W
Switching Energy	270µJ (on), 230µJ (off)
Input Type	Standard
Gate Charge	19 nC
Td (on/off) @ 25°C	15ns/68ns
Test Condition	400V, 15A, 20Ohm, 15V
Reverse Recovery Time (trr)	110 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220AB

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