IXBX50N360HV Details_IXBX50N360HV Related parameters PDF

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	BIMOSFET™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	3600 V
Current - Collector (Ic) (Max)	125 A
Current - Collector Pulsed (Icm)	420 A
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 50A
Power - Max	660 W
Switching Energy	-
Input Type	Standard
Gate Charge	210 nC
Td (on/off) @ 25°C	46ns/205ns
Test Condition	960V, 50A, 5Ohm, 15V
Reverse Recovery Time (trr)	1.7 µs
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Supplier Device Package	TO-247PLUS-HV

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