SGH10N60RUFDTU Details_SGH10N60RUFDTU Related parameters PDF

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	16 A
Current - Collector Pulsed (Icm)	30 A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 10A
Power - Max	75 W
Switching Energy	141µJ (on), 215µJ (off)
Input Type	Standard
Gate Charge	30 nC
Td (on/off) @ 25°C	15ns/36ns
Test Condition	300V, 10A, 20Ohm, 15V
Reverse Recovery Time (trr)	60 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3PN

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