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Transistors - IGBTs - Single
HGT1S10N120BNS Picture

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HGT1S10N120BNS

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In Stock:3,865(Ref. price)
Qty.Unit PriceExt. Price
1
$3.29280
$3.29280
Documents
Specifications
DescriptionDetails
Series
-
Package
Bulk
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Max)
1.2 V
Current - Collector (Ic) (Max)
35 A
Current - Collector Pulsed (Icm)
80 A
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 10A
Power - Max
298 W
Switching Energy
320µJ (on), 800µJ (off)
Input Type
Standard
Gate Charge
100 nC
Td (on/off) @ 25°C
23ns/165ns
Test Condition
960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr)
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263AB
Other
Price advantage, HGT1S10N120BNS is available in stock and can be delivered on the same day
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