APT35GP120B2D2G Details_APT35GP120B2D2G Related parameters PDF

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	POWER MOS 7®
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	96 A
Current - Collector Pulsed (Icm)	140 A
Vce(on) (Max) @ Vge, Ic	3.9V @ 15V, 35A
Power - Max	540 W
Switching Energy	1mJ (on), 1.185mJ (off)
Input Type	Standard
Gate Charge	150 nC
Td (on/off) @ 25°C	14ns, 99ns
Test Condition	800V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr)	85 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Supplier Device Package	T-MAX™ [B2]

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