GT30J341,Q Details_GT30J341,Q Related parameters PDF_Toshiba Semiconductor and Storage-Winwic

Transistors - IGBTs - Single

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In Stock：18,594(Ref. price)

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Specifications

Description	Details
Series	-
Package	Tray
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	59 A
Current - Collector Pulsed (Icm)	120 A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 30A
Power - Max	230 W
Switching Energy	800µJ (on), 600µJ (off)
Input Type	Standard
Gate Charge	-
Td (on/off) @ 25°C	80ns/280ns
Test Condition	300V, 30A, 24Ohm, 15V
Reverse Recovery Time (trr)	50 ns
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P(N)

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