IXYX100N65B3D1 Details_IXYX100N65B3D1 Related parameters PDF

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	GenX3™, XPT™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	225 A
Current - Collector Pulsed (Icm)	460 A
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 70A
Power - Max	830 W
Switching Energy	1.27mJ (on), 1.37mJ (off)
Input Type	Standard
Gate Charge	168 nC
Td (on/off) @ 25°C	29ns/150ns
Test Condition	400V, 50A, 3Ohm, 15V
Reverse Recovery Time (trr)	156 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	PLUS247™-3

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