IXYB82N120C3H1 Details_IXYB82N120C3H1 Related parameters PDF

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	GenX3™, XPT™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	164 A
Current - Collector Pulsed (Icm)	320 A
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 82A
Power - Max	1040 W
Switching Energy	4.95mJ (on), 2.78mJ (off)
Input Type	Standard
Gate Charge	215 nC
Td (on/off) @ 25°C	29ns/192ns
Test Condition	600V, 80A, 2Ohm, 15V
Reverse Recovery Time (trr)	420 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Supplier Device Package	PLUS264™

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