IXBL60N360 Details_IXBL60N360 Related parameters PDF

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	BIMOSFET™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	3600 V
Current - Collector (Ic) (Max)	92 A
Current - Collector Pulsed (Icm)	720 A
Vce(on) (Max) @ Vge, Ic	3.4V @ 15V, 60A
Power - Max	417 W
Switching Energy	-
Input Type	Standard
Gate Charge	450 nC
Td (on/off) @ 25°C	50ns/340ns
Test Condition	960V, 60A, 4.7Ohm, 15V
Reverse Recovery Time (trr)	1.95 µs
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	ISOPLUSi5-Pak™
Supplier Device Package	ISOPLUSi5-Pak™

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