NGTB35N60FL2WG Details_NGTB35N60FL2WG Related parameters PDF

Transistors - IGBTs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：18,326(Ref. price)

Qty.	Unit Price	Ext. Price
1	$4.26240	$4.26240

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	70 A
Current - Collector Pulsed (Icm)	120 A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 35A
Power - Max	300 W
Switching Energy	840µJ (on), 280µJ (off)
Input Type	Standard
Gate Charge	125 nC
Td (on/off) @ 25°C	72ns/132ns
Test Condition	400V, 35A, 10Ohm, 15V
Reverse Recovery Time (trr)	68 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247

Other

Price advantage, NGTB35N60FL2WG is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
STGW30NC60KD	STMicroelectronics	Transistors - IGBTs - Single	Datasheet	IGBT 600V 60A 200W TO247	$6.36020	In Stock:18348
STGP7NB60KD	STMicroelectronics	Transistors - IGBTs - Single	Datasheet	IGBT 600V 14A 80W TO220	No price	In Stock:18358
IXYP24N100C4	IXYS	Transistors - IGBTs - Single	Datasheet	IGBT DISCRETE TO-220	$5.03689	In Stock:18360
TIG032TS-TL-H	ON Semiconductor	Transistors - IGBTs - Single	Datasheet	NCH IGBT 180A 400V 2.5V	$0.31680	In Stock:226484
FZ3600R17HE4NPSA1	Infineon Technologies	Transistors - IGBTs - Single	Datasheet	INSULATED GATE BIPOLAR TRANSISTO	$1130.66110	In Stock:18366