MAPRST0912-350 Details_MAPRST0912-350 Related parameters PDF

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tray
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	65V
Frequency - Transition	1.215GHz
Noise Figure (dB Typ @ f)	-
Gain	9.4dB
Power - Max	350W
DC Current Gain (hFE) (Min) @ Ic, Vce	-
Current - Collector (Ic) (Max)	32.5A
Operating Temperature	200°C (TJ)
Mounting Type	Chassis Mount
Package / Case	-
Supplier Device Package	-

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