MPSH10G Details_MPSH10G Related parameters PDF

Transistors - Bipolar - RF

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：19,220(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	25V
Frequency - Transition	650MHz
Noise Figure (dB Typ @ f)	-
Gain	-
Power - Max	350mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 4mA, 10V
Current - Collector (Ic) (Max)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92-3

Other

Price advantage, MPSH10G is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
2SC5753-T2-A	CEL	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 6V 12GHZ SOT343F	No price	In Stock:17034
80273H	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	TRANSISTOR	No price	In Stock:17040
BFT25,215	NXP USA Inc.	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 5V 2.3GHZ TO236AB	No price	In Stock:2997
70062A	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF POWER TRANSISTOR	No price	In Stock:17056
NE85639R-T1	CEL	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 12V 9GHZ SOT143R	No price	In Stock:17060