DF11MR12W1M1B11BOMA1 Details_DF11MR12W1M1B11BOMA1 Related parameters PDF

MOSFETs - Arrays

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Specifications

Description	Details
Series	*
Package	Bulk
FET Type	2 N-Channel (Dual)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	50A
Rds On (Max) @ Id, Vgs	23mOhm @ 50A, 15V
Vgs(th) (Max) @ Id	5.5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs	125nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	3950pF @ 800V
Power - Max	20mW
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

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