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MOSFETs - Single
HAT2192WP-EL-E Picture

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HAT2192WP-EL-E

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In Stock:19,686(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Tape & Reel (TR)
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
230mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
710 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
25W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-WPAK
Package / Case
8-PowerWDFN
Other
Price advantage, HAT2192WP-EL-E is available in stock and can be delivered on the same day
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