SIR664DP-T1-GE3 Details_SIR664DP-T1-GE3 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	1750 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

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