MCH5839-TL-H Details_MCH5839-TL-H Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	266mOhm @ 750mA, 4.5V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	1.7 nC @ 4.5 V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	120 pF @ 10 V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	800mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	5-MCPH
Package / Case	6-SMD (5 Leads), Flat Lead

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