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MOSFETs - Single
2N7639-GA Picture

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2N7639-GA

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In Stock:17,030(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Bulk
FET Type
-
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
15A (Tc) (155°C)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
105mOhm @ 15A
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
1534 pF @ 35 V
FET Feature
-
Power Dissipation (Max)
172W (Tc)
Operating Temperature
-55°C ~ 225°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-257
Package / Case
TO-257-3
Other
Price advantage, 2N7639-GA is available in stock and can be delivered on the same day
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