SI4100DY-T1-E3 Details_SI4100DY-T1-E3 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	63mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

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