DF1000R17IE4BOSA1 Details_DF1000R17IE4BOSA1 Related parameters PDF

Transistors - IGBTs - Modules

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：17,100(Ref. price)

Qty.	Unit Price	Ext. Price
1	$675.10801	$675.10801

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	-
Configuration	Single
Voltage - Collector Emitter Breakdown (Max)	1700 V
Current - Collector (Ic) (Max)	-
Power - Max	6250 W
Vce(on) (Max) @ Vge, Ic	2.45V @ 15V, 1000A
Current - Collector Cutoff (Max)	5 mA
Input Capacitance (Cies) @ Vce	81 nF @ 25 V
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 150°C
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

Other

Price advantage, DF1000R17IE4BOSA1 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
APTGT30SK170T1G	Microsemi Corporation	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE 1700V 45A 210W SP1	No price	In Stock:18478
FS50R12KT4PB11BPSA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MOD 1200V 100A 20MW	$87.48264	In Stock:18480
APTGT75SK120D1G	Microsemi Corporation	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE 1200V 110A 357W D1	No price	In Stock:18482
MSCGTQ100HD65C1AG	Microchip Technology	Transistors - IGBTs - Modules	Datasheet	PM-IGBT-TFS-SBD~-SP1F	$101.97	In Stock:1628
DF450R12N2E4PB11BPSA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE LOW POWER ECONO	$121.46225	In Stock:18486