IXXH40N65B4D1 Details_IXXH40N65B4D1 Related parameters PDF

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	XPT™, GenX4™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	115 A
Current - Collector Pulsed (Icm)	225 A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 40A
Power - Max	455 W
Switching Energy	1.4mJ (on), 800µJ (off)
Input Type	Standard
Gate Charge	66 nC
Td (on/off) @ 25°C	20ns/115ns
Test Condition	400V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr)	60 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247

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